Unusual lattice vibration characteristics in whiskers of the pseudo-one-dimensional titanium trisulfide TiS3

نویسندگان

  • Kedi Wu
  • Engin Torun
  • Hasan Sahin
  • Bin Chen
  • Xi Fan
  • Anupum Pant
  • David Parsons Wright
  • Toshihiro Aoki
  • Francois M Peeters
  • Emmanuel Soignard
  • Sefaattin Tongay
چکیده

Transition metal trichalcogenides form a class of layered materials with strong in-plane anisotropy. For example, titanium trisulfide (TiS3) whiskers are made out of weakly interacting TiS3 layers, where each layer is made of weakly interacting quasi-one-dimensional chains extending along the b axis. Here we establish the unusual vibrational properties of TiS3 both experimentally and theoretically. Unlike other two-dimensional systems, the Raman active peaks of TiS3 have only out-of-plane vibrational modes, and interestingly some of these vibrations involve unique rigid-chain vibrations and S-S molecular oscillations. High-pressure Raman studies further reveal that the AgS-S S-S molecular mode has an unconventional negative pressure dependence, whereas other peaks stiffen as anticipated. Various vibrational modes are doubly degenerate at ambient pressure, but the degeneracy is lifted at high pressures. These results establish the unusual vibrational properties of TiS3 with strong in-plane anisotropy, and may have relevance to understanding of vibrational properties in other anisotropic two-dimensional material systems.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Titanium trisulfide monolayer: theoretical prediction of a new direct-gap semiconductor with high and anisotropic carrier mobility.

A new two-dimensional (2D) layered material, namely, titanium trisulfide (TiS3 ) monolayer, is predicted to possess novel electronic properties. Ab initio calculations show that the perfect TiS3 monolayer is a direct-gap semiconductor with a bandgap of 1.02 eV, close to that of bulk silicon, and with high carrier mobility. More remarkably, the in-plane electron mobility of the 2D TiS3 is highly...

متن کامل

Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties.

We present characterizations of few-layer titanium trisulfide (TiS3) flakes which, due to their reduced in-plane structural symmetry, display strong anisotropy in their electrical and optical properties. Exfoliated few-layer flakes show marked anisotropy of their in-plane mobilities reaching ratios as high as 7.6 at low temperatures. Based on the preferential growth axis of TiS3 nanoribbons, we...

متن کامل

High current density electrical breakdown of TiS3 nanoribbon-based field-effect transistors

The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, we study here the high current density properties of the layered material tit...

متن کامل

Numerical Simulation of Homogeneous, Two and Three Lattice Layers Scaffolds with Constant Density

Advances in the additive manufacturing technology have led to the production of complex microstructures with unprecedented accuracy and due todesigning an effective implant is a major scientific challenge in bone tissue regeneration and bone growth. In this research, titanium alloy cylindrical scaffolds with three-dimensional architectures have been simulated and compared for curing partial bon...

متن کامل

Adaptive Tunable Vibration Absorber using Shape Memory Alloy

This study presents a new approach to control the nonlinear dynamics of an adaptive absorber using shape memory alloy (SMA) element. Shape memory alloys are classified as smart materials that can remember their original shape after deformation. Stress and temperature-induced phase transformations are two typical behaviors of shape memory alloys. Changing the stiffness associated with phase tran...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره 7  شماره 

صفحات  -

تاریخ انتشار 2016